BFR740L3RHE6327XTSA1
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- Mfr.Part #
- BFR740L3RHE6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- RF TRANS NPN 4.7V 42GHZ TSLP-3
- Stock
- 21,375
- In Stock ：
- 21,375
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 160mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 13V
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 25mA 3V
- Voltage - Collector Emitter Breakdown (Max) :
- 4.7V
- Number of Terminations :
- 3
- Current Rating :
- 30mA
- ECCN Code :
- EAR99
- JESD-609 Code :
- e4
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 160mW
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 1.2V
- Configuration :
- Single
- Transition Frequency :
- 42000MHz
- Halogen Free :
- Halogen Free
- Frequency :
- 42GHz
- Voltage - Rated DC :
- 4V
- Collector Emitter Voltage (VCEO) :
- 4V
- Published :
- 2005
- Number of Pins :
- 3
- Contact Plating :
- Gold
- Mount :
- Surface Mount
- Max Collector Current :
- 30mA
- Base Part Number :
- BFR740
- Package / Case :
- SC-101, SOT-883
- Gain :
- 24.5dB
- Noise Figure (dB Typ @ f) :
- 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Case Connection :
- Emitter
- Transistor Element Material :
- SILICON GERMANIUM
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Datasheets
- BFR740L3RHE6327XTSA1
BFR740L3RHE6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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