BFR 182W E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Packaging :

Tape and Reel (TR)

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Current - Collector (Ic) (Max) :

35mA

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Base Part Number :

BFR182

Highest Frequency Band :

L B

Number of Terminations :

3

Collector-Base Capacitance-Max :

0.5pF

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Frequency - Transition :

8GHz

Voltage - Collector Emitter Breakdown (Max) :

12V

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Gain :

19dB

Additional Feature :

LOW NOISE

Package / Case :

SC-70, SOT-323

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Power - Max :

250mW

Transistor Element Material :

SILICON

Surface Mount :

yes

Number of Elements :

1

Terminal Form :

Gull wing

Reach Compliance Code :

Compliant

Transition Frequency :

8000MHz

Published :

2011

Transistor Type :

NPN