BFP840ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Width :

1.25mm

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

2.25V

Collector Base Voltage (VCBO) :

2.9V

Element Configuration :

Single

Mounting Type :

Surface Mount

Length :

2mm

Max Collector Current :

35mA

Frequency :

80GHz

Transition Frequency :

80MHz

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

2.9V

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Base Part Number :

BFP840

Power Dissipation :

75mW

Factory Lead Time :

4 Weeks

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

0.85dB @ 5.5GHz

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

2.25V

Terminal Position :

Dual

Gain :

18.5dB

Published :

2013

Max Breakdown Voltage :

2.25V

Operating Temperature :

150°C TJ

Weight :

6.406992mg

Transistor Element Material :

SILICON

Number of Elements :

1

Mount :

Surface Mount

Number of Pins :

4

Contact Plating :

Tin

Max Power Dissipation :

75mW

Package / Case :

SC-82A, SOT-343

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Collector Current :

35mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 10mA 1.8V

Height :

800μm

Transistor Application :

AMPLIFIER

Additional Feature :

LOW NOISE

Halogen Free :

Halogen Free

Terminal Form :

Gull wing