BFP840ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Continuous Collector Current :

35mA

Contact Plating :

Tin

Width :

1.25mm

ECCN Code :

EAR99

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 10mA 1.8V

Max Collector Current :

35mA

Max Breakdown Voltage :

2.25V

JESD-609 Code :

e3

Frequency :

80GHz

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

2.25V

Number of Elements :

1

Operating Temperature :

150°C TJ

Base Part Number :

BFP840

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

0.85dB @ 5.5GHz

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Gain :

18.5dB

Power Dissipation :

75mW

Transition Frequency :

80MHz

Length :

2mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

2.9V

Additional Feature :

LOW NOISE

Number of Pins :

4

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

2.25V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Max Power Dissipation :

75mW

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-82A, SOT-343

Terminal Position :

Dual

Number of Terminations :

4

Height :

800μm

Element Configuration :

Single

Collector Base Voltage (VCBO) :

2.9V

Transistor Element Material :

SILICON

Weight :

6.406992mg