BFP840ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Max Collector Current :

35mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

2.9V

Published :

2013

Max Power Dissipation :

75mW

ECCN Code :

EAR99

Package / Case :

SC-82A, SOT-343

Max Breakdown Voltage :

2.25V

Noise Figure (dB Typ @ f) :

0.85dB @ 5.5GHz

Frequency :

80GHz

Base Part Number :

BFP840

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 10mA 1.8V

Collector Emitter Breakdown Voltage :

2.25V

Transition Frequency :

80MHz

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Power Dissipation :

75mW

Transistor Type :

NPN

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Gain :

18.5dB

Width :

1.25mm

Transistor Element Material :

SILICON

Height :

800μm

Collector Emitter Voltage (VCEO) :

2.25V

Collector Base Voltage (VCBO) :

2.9V

Continuous Collector Current :

35mA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Number of Terminations :

4

Additional Feature :

LOW NOISE

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Number of Pins :

4

Number of Elements :

1

Terminal Position :

Dual

Weight :

6.406992mg

Lead Free :

Lead Free