BFG67,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Finish :

Tin (Sn)

Power Dissipation-Max (Abs) :

0.3W

Number of Elements :

1

Transistor Application :

AMPLIFIER

Configuration :

Single

ECCN Code :

EAR99

Power - Max :

380mW

Highest Frequency Band :

L B

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

10V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 15mA 5V

Transistor Type :

NPN

Package / Case :

TO-253-4, TO-253AA

Terminal Form :

Gull wing

JESD-609 Code :

e3

Reference Standard :

CECC

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Pin Count :

4

Number of Terminations :

4

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Base Part Number :

BFG67

Additional Feature :

High Reliability

Frequency - Transition :

8GHz

Power Dissipation Ambient-Max :

0.3W

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

50mA

Operating Temperature :

175°C TJ

Noise Figure (dB Typ @ f) :

1.3dB ~ 3dB @ 1GHz ~ 2GHz

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Transition Frequency :

8000MHz

Published :

1998

JESD-30 Code :

R-PDSO-G4

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN