BF 770A E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

9.5dB ~ 14.5dB

Power - Max :

300mW

Collector-Base Capacitance-Max :

0.9pF

Current - Collector (Ic) (Max) :

90mA

Surface Mount :

yes

Terminal Position :

Dual

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Frequency - Transition :

6GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Configuration :

Single

JESD-30 Code :

R-PDSO-G3

Voltage - Collector Emitter Breakdown (Max) :

12V

Terminal Finish :

MATTE TIN

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Transistor Type :

NPN

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Published :

2007

Packaging :

Tape and Reel (TR)

Transition Frequency :

6000MHz

Polarity/Channel Type :

NPN