BDW84B-S

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Mfr.Part #
BDW84B-S
Manufacturer
Bourns, Inc.
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS PNP DARL 80V 15A SOT93
Stock
19,154
In Stock :
19,154

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-65°C~150°C TJ
Polarity :
PNP
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
RoHS Status :
ROHS3 Compliant
Min Operating Temperature :
-65°C
Published :
2011
Element Configuration :
Single
Max Operating Temperature :
150°C
Number of Elements :
1
Supplier Device Package :
SOT-93
Collector Emitter Voltage (VCEO) :
80V
Voltage - Collector Emitter Breakdown (Max) :
80V
Number of Pins :
3
Max Collector Current :
15A
Collector Emitter Saturation Voltage :
2.5V
Collector Base Voltage (VCBO) :
80V
Package / Case :
TO-218-3
Base Part Number :
BDW84
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP - Darlington
Collector Emitter Breakdown Voltage :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Mount :
Through Hole
Power - Max :
3.5W
Current - Collector Cutoff (Max) :
1mA
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
15A
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
3.5W
Datasheets
BDW84B-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW84B-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Package / Case:TO-218-3, Base Part Number:BDW84, Mounting Type:Through Hole, BDW84B-S pinout, BDW84B-S datasheet PDF, BDW84B-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW84B-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW84B-S


PNP - Darlington -65°C~150°C TJ 1mA 1 Elements TO-218-3 Tube Through Hole

BDW84B-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 6A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 150mA, 15A.The emitter base voltage can be kept at 5V for high efficiency.This product comes in a SOT-93 device package from the supplier.Device displays Collector Emitter Breakdown (80V maximal voltage).Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

BDW84B-S Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93


BDW84B-S Applications


There are a lot of Bourns Inc.
BDW84B-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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