BDW83C-S

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Mfr.Part #
BDW83C-S
Manufacturer
Bourns, Inc.
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS NPN DARL 100V 15A SOT93
Stock
45,175
In Stock :
45,175

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
BDW83
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
SOT-93
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
1mA
Published :
2011
Packaging :
Tube
Max Operating Temperature :
150°C
Collector Emitter Voltage (VCEO) :
100V
Operating Temperature :
-65°C~150°C TJ
Max Collector Current :
15A
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN - Darlington
Current - Collector (Ic) (Max) :
15A
Min Operating Temperature :
-65°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Collector Emitter Breakdown Voltage :
100V
Collector Base Voltage (VCBO) :
100V
Mount :
Through Hole
Number of Elements :
1
Number of Pins :
3
Collector Emitter Saturation Voltage :
2.5V
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
100V
Max Power Dissipation :
3.5W
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Polarity :
NPN
Power - Max :
3.5W
Package / Case :
TO-218-3
Element Configuration :
Single
Datasheets
BDW83C-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW83C-S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BDW83, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-218-3, BDW83C-S pinout, BDW83C-S datasheet PDF, BDW83C-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW83C-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW83C-S


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements TO-218-3 Tube Through Hole

BDW83C-S Overview


In this device, the DC current gain is 750 @ 6A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 150mA, 15A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Product comes in the supplier's device package SOT-93.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

BDW83C-S Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93


BDW83C-S Applications


There are a lot of Bourns Inc.
BDW83C-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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