BDW83C-TO218
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- Mfr.Part #
- BDW83C-TO218
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-218-3, TO-218AC
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 15A TO218
- Stock
- 7,396
- In Stock ：
- 7,396
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 15A
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- TO-218
- Collector Emitter Voltage (VCEO) :
- 4V
- Max Collector Current :
- 15A
- Power - Max :
- 130W
- Max Power Dissipation :
- 130W
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- TO-218-3, TO-218AC
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 6A 3V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 150mA, 15A
- Base Part Number :
- BDW83
- Current - Collector Cutoff (Max) :
- 1mA
- Datasheets
- BDW83C-TO218
NPN - Darlington 150°C TJ 1mA TO-218-3, TO-218AC Tube Through Hole
BDW83C-TO218 Overview
This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-218.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.The maximum collector current is 15A volts.
BDW83C-TO218 Features
the DC current gain for this device is 750 @ 6A 3V
the vce saturation(Max) is 4V @ 150mA, 15A
the supplier device package of TO-218
BDW83C-TO218 Applications
There are a lot of STMicroelectronics
BDW83C-TO218 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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