BDW83B-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

3.5W

Operating Temperature :

-65°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Transistor Type :

NPN - Darlington

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Package / Case :

TO-218-3

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

4V @ 150mA, 15A

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

80V

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.5V

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

80V

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Mount :

Through Hole

Terminal Position :

Single

Collector Emitter Voltage (VCEO) :

4V

Number of Pins :

3

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

1mA

Max Collector Current :

15A

Polarity :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 6A 3V

Base Part Number :

BDW83

Published :

2011

Packaging :

Tube

Number of Terminations :

3

Pin Count :

3

Max Power Dissipation :

3.5W