BDW83C

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Mfr.Part #
BDW83C
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 100V 15A TO247-3
Stock
6,117
In Stock :
6,117

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Pin Count :
3
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Transistor Type :
NPN - Darlington
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
100V
Pbfree Code :
yes
JESD-609 Code :
e3
Package / Case :
TO-247-3
VCEsat-Max :
4 V
Polarity :
NPN
Transistor Application :
SWITCHING
hFE Min :
100
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
100V
Max Collector Current :
15A
Max Power Dissipation :
130W
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Contact Plating :
Tin
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
2.5V
Lead Free :
Lead Free
Power Dissipation :
130W
Number of Pins :
3
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
4V @ 150mA, 15A
Width :
5.15mm
Base Part Number :
BDW83
Element Configuration :
Single
Height :
20.15mm
Voltage - Rated DC :
100V
Length :
15.75mm
Emitter Base Voltage (VEBO) :
5V
Mount :
Through Hole
Weight :
90.718474g
Current Rating :
15A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
1mA
Radiation Hardening :
No
Datasheets
BDW83C
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BDW83C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:BDW83, BDW83C pinout, BDW83C datasheet PDF, BDW83C amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BDW83C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BDW83C


NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDW83C Overview


This device has a DC current gain of 750 @ 6A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.The maximum collector current is 15A volts.

BDW83C Features


the DC current gain for this device is 750 @ 6A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A


BDW83C Applications


There are a lot of STMicroelectronics
BDW83C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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