BDT61B-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

1993

Pin Count :

3

Collector Emitter Breakdown Voltage :

100V

hFE Min :

750

Number of Terminations :

3

Base Part Number :

BDT61

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 1.5A

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

100V

JESD-609 Code :

e1

Transistor Type :

NPN - Darlington

Max Collector Current :

4A

JESD-30 Code :

R-PSFM-T3

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

500μA

Terminal Finish :

TIN SILVER COPPER

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Polarity :

NPN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Max Power Dissipation :

2W

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Collector Emitter Saturation Voltage :

2.5V

Power - Max :

2W

Mount :

Through Hole

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V