BDT61C-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Collector Emitter Saturation Voltage :

2.5V

Mount :

Through Hole

Published :

1993

Emitter Base Voltage (VEBO) :

5V

JESD-30 Code :

R-PSFM-T3

Collector Emitter Voltage (VCEO) :

120V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 1.5A

Number of Terminations :

3

Power - Max :

2W

Radiation Hardening :

No

hFE Min :

750

Number of Elements :

1

Element Configuration :

Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Max Collector Current :

4A

JEDEC-95 Code :

TO-220AB

Pin Count :

3

ECCN Code :

EAR99

Max Power Dissipation :

2W

Transistor Element Material :

SILICON

Transistor Type :

NPN - Darlington

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

120V

Package / Case :

TO-220-3

JESD-609 Code :

e1

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

120V

Current - Collector Cutoff (Max) :

500μA

Pbfree Code :

yes

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Case Connection :

COLLECTOR

Terminal Finish :

TIN SILVER COPPER

Base Part Number :

BDT61

Polarity :

NPN