BDT60C-S

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Mfr.Part #
BDT60C-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 120V 4A TO220
Stock
43,955
In Stock :
43,955

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 1.5A
Packaging :
Tube
Min Operating Temperature :
-65°C
Number of Elements :
1
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
120V
Max Operating Temperature :
150°C
Base Part Number :
BDT60
Element Configuration :
Single
Transistor Type :
PNP - Darlington
Max Power Dissipation :
2W
Collector Emitter Saturation Voltage :
2.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
4A
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Breakdown Voltage :
120V
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
120V
Voltage - Collector Emitter Breakdown (Max) :
120V
Package / Case :
TO-220-3
Polarity :
PNP
Current - Collector Cutoff (Max) :
500μA
Current - Collector (Ic) (Max) :
4A
Power - Max :
2W
Published :
1993
Supplier Device Package :
TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
Datasheets
BDT60C-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDT60C-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BDT60, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, BDT60C-S pinout, BDT60C-S datasheet PDF, BDT60C-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDT60C-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDT60C-S


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BDT60C-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 120V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 4A volts.

BDT60C-S Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 1.5A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BDT60C-S Applications


There are a lot of Bourns Inc.
BDT60C-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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