BDT60B-S
- Mfr.Part #
- BDT60B-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A TO220
- Stock
- 38,329
- In Stock :
- 38,329
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Max Collector Current :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 1.5A
- Collector Emitter Breakdown Voltage :
- 100V
- Max Operating Temperature :
- 150°C
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 2W
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Min Operating Temperature :
- -65°C
- Published :
- 1993
- Current - Collector (Ic) (Max) :
- 4A
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 2.5V
- Package / Case :
- TO-220-3
- Power - Max :
- 2W
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Base Voltage (VCBO) :
- 100V
- Polarity :
- PNP
- Base Part Number :
- BDT60
- Supplier Device Package :
- TO-220
- Datasheets
- BDT60B-S

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole
BDT60B-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Supplier package TO-220 contains the product.The device has a 100V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 4A volts can be achieved.
BDT60B-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 1.5A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BDT60B-S Applications
There are a lot of Bourns Inc.
BDT60B-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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