BDT60-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

60V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 1.5A

Voltage - Collector Emitter Breakdown (Max) :

60V

Number of Elements :

1

Min Operating Temperature :

-65°C

Mounting Type :

Through Hole

Mount :

Through Hole

Max Collector Current :

4A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

4A

Element Configuration :

Single

Published :

1993

Current - Collector Cutoff (Max) :

500μA

Base Part Number :

BDT60

Collector Emitter Voltage (VCEO) :

60V

Transistor Type :

PNP - Darlington

Supplier Device Package :

TO-220

Polarity :

PNP

Collector Emitter Saturation Voltage :

2.5V

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Power - Max :

2W

Collector Emitter Breakdown Voltage :

60V

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

2W

Operating Temperature :

-65°C~150°C TJ