BDP954E6327HTSA1
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- Mfr.Part #
- BDP954E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A SOT223-4
- Stock
- 19,214
- In Stock ：
- 19,214
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Published :
- 2011
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Power - Max :
- 5W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Frequency - Transition :
- 100MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BDP954E6327HTSA1
PNP 150°C TJ 100nA ICBO TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BDP954E6327HTSA1 Overview
This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
BDP954E6327HTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
BDP954E6327HTSA1 Applications
There are a lot of Infineon Technologies
BDP954E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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