BDP954H6327XTSA1
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- Mfr.Part #
- BDP954H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A SOT223-4
- Stock
- 114,566
- In Stock ：
- 114,566
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 5W
- Current - Collector (Ic) (Max) :
- 3A
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 120V
- Height :
- 1.6mm
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 5W
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 6.5mm
- Collector Emitter Voltage (VCEO) :
- 500mV
- Width :
- 3.5mm
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Published :
- 2011
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Datasheets
- BDP954H6327XTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BDP954H6327XTSA1 Overview
DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 3A volts.
BDP954H6327XTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BDP954H6327XTSA1 Applications
There are a lot of Infineon Technologies
BDP954H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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