BDP954E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

Polarity/Channel Type :

PNP

Terminal Position :

Dual

Package Shape :

RECTANGULAR

Transistor Application :

AMPLIFIER

Product Status :

Active

DC Current Gain-Min (hFE) :

100

Manufacturer :

Infineon Technologies AG

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PDSO-G4

Collector-Emitter Voltage-Max :

100 V

Qualification Status :

Not Qualified

Collector Current-Max (IC) :

3 A

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Subcategory :

Other Transistors

Mounting Type :

Surface Mount

Frequency - Transition :

100MHz

Configuration :

Single

Number of Terminals :

4

Operating Temperature :

150°C (TJ)

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

100 V

Power Dissipation-Max (Abs) :

3 W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Surface Mount :

yes

Series :

Automotive, AEC-Q101

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 1A, 2V

Package :

Bulk

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Supplier Device Package :

PG-SOT223-4

Power - Max :

5 W

Current - Collector (Ic) (Max) :

3 A

Package / Case :

TO-261-4, TO-261AA