BDP949E6327HTSA1

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Mfr.Part #
BDP949E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 60V 3A SOT223-4
Stock
35,351
In Stock :
35,351

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Number of Pins :
4
Published :
2011
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
500mV
ECCN Code :
EAR99
Mount :
Surface Mount
Base Part Number :
BDP949
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
5W
Frequency :
100MHz
Max Power Dissipation :
5W
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-261-4, TO-261AA
Mounting Type :
Surface Mount
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
60V
Max Breakdown Voltage :
60V
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
60V
Transistor Type :
NPN
Max Collector Current :
3A
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 1V
Datasheets
BDP949E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BDP949E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Base Part Number:BDP949, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, BDP949E6327HTSA1 pinout, BDP949E6327HTSA1 datasheet PDF, BDP949E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BDP949E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BDP949E6327HTSA1


NPN 150°C TJ 100nA ICBO 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BDP949E6327HTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 3A volts.

BDP949E6327HTSA1 Features


the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V


BDP949E6327HTSA1 Applications


There are a lot of Infineon Technologies
BDP949E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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