BDP950E6327HTSA1
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- Mfr.Part #
- BDP950E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT223-4
- Stock
- 41,924
- In Stock ：
- 41,924
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 100MHz
- Power - Max :
- 5W
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BDP950
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 3A
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- JESD-30 Code :
- R-PDSO-G4
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Reference Standard :
- AEC-Q101
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-261-4, TO-261AA
- Frequency - Transition :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Datasheets
- BDP950E6327HTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BDP950E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 60V maximal voltage - Collector Emitter Breakdown.
BDP950E6327HTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 100MHz
BDP950E6327HTSA1 Applications
There are a lot of Infineon Technologies
BDP950E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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