BD682T

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Mfr.Part #
BD682T
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 100V 4A TO126
Stock
28,947
In Stock :
28,947

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Reach Compliance Code :
not_compliant
Lead Free :
Contains Lead
Current - Collector Cutoff (Max) :
500μA
Transistor Application :
AMPLIFIER
Base Part Number :
BD682
Terminal Finish :
Tin/Lead (Sn/Pb)
Max Collector Current :
4A
Voltage - Rated DC :
-100V
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
hFE Min :
750
Transistor Type :
PNP - Darlington
Time@Peak Reflow Temperature-Max (s) :
30
Max Power Dissipation :
40W
Package / Case :
TO-225AA, TO-126-3
RoHS Status :
Non-RoHS Compliant
Power Dissipation :
40W
Published :
2008
Collector Base Voltage (VCBO) :
100V
Collector Emitter Voltage (VCEO) :
100V
Mounting Type :
Through Hole
ECCN Code :
EAR99
Pin Count :
3
Transistor Element Material :
SILICON
Polarity :
PNP
Packaging :
Tube
Number of Terminations :
3
Current Rating :
-4A
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Peak Reflow Temperature (Cel) :
240
Collector Emitter Breakdown Voltage :
100V
Number of Pins :
3
Transition Frequency :
10MHz
Emitter Base Voltage (VEBO) :
5V
Qualification Status :
Not Qualified
Continuous Collector Current :
4A
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e0
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Element Configuration :
Single
Datasheets
BD682T
Introducing Transistors - Bipolar (BJT) - Single onsemi BD682T from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD682, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, BD682T pinout, BD682T datasheet PDF, BD682T amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD682T ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD682T


PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD682T Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 10MHz.A maximum collector current of 4A volts can be achieved.

BD682T Features


the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz


BD682T Applications


There are a lot of ON Semiconductor
BD682T applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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