BD682T
- Mfr.Part #
- BD682T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A TO126
- Stock
- 28,947
- In Stock :
- 28,947
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Contains Lead
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- BD682
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Collector Current :
- 4A
- Voltage - Rated DC :
- -100V
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 750
- Transistor Type :
- PNP - Darlington
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Power Dissipation :
- 40W
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation :
- 40W
- Published :
- 2008
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Polarity :
- PNP
- Packaging :
- Tube
- Number of Terminations :
- 3
- Current Rating :
- -4A
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Peak Reflow Temperature (Cel) :
- 240
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Transition Frequency :
- 10MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- Continuous Collector Current :
- 4A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Element Configuration :
- Single
- Datasheets
- BD682T
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PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD682T Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 1.5A 3V.When VCE saturation is 2.5V @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 10MHz.A maximum collector current of 4A volts can be achieved.
BD682T Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD682T Applications
There are a lot of ON Semiconductor
BD682T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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