BD680ASTU

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Mfr.Part #
BD680ASTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 80V 4A TO126-3
Stock
220
In Stock :
220

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Mount :
Through Hole
Continuous Collector Current :
-4A
Width :
3.25mm
Number of Pins :
3
Length :
8mm
Collector Emitter Saturation Voltage :
2.8V
Current Rating :
-4A
Operating Temperature :
150°C TJ
Collector Base Voltage (VCBO) :
-80V
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 40mA, 2A
Weight :
761mg
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Contact Plating :
Tin
Transistor Type :
PNP - Darlington
Power Dissipation :
14W
Pbfree Code :
yes
Factory Lead Time :
20 Weeks
JESD-609 Code :
e3
Package / Case :
TO-225AA, TO-126-3
Packaging :
Tube
Lead Free :
Lead Free
Max Power Dissipation :
14W
Emitter Base Voltage (VEBO) :
-5V
Base Part Number :
BD680
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Polarity :
PNP
Max Collector Current :
4A
hFE Min :
750
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Voltage - Rated DC :
-80V
Mounting Type :
Through Hole
Published :
2002
Height :
11mm
ECCN Code :
EAR99
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Voltage (VCEO) :
80V
Current - Collector Cutoff (Max) :
500μA
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Datasheets
BD680ASTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD680ASTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD680, Mounting Type:Through Hole, Number of Terminations:3, BD680ASTU pinout, BD680ASTU datasheet PDF, BD680ASTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD680ASTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD680ASTU


PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD680ASTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A 3V.With a collector emitter saturation voltage of 2.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 40mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.Collector current can be as low as 4A volts at its maximum.

BD680ASTU Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A


BD680ASTU Applications


There are a lot of ON Semiconductor
BD680ASTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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