BD681S
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- Mfr.Part #
- BD681S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Width :
- 3.25mm
- hFE Min :
- 750
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Current Rating :
- 4A
- Current - Collector Cutoff (Max) :
- 500μA
- Packaging :
- Bulk
- Length :
- 8mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Voltage - Rated DC :
- 100V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- Continuous Collector Current :
- 4A
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BD681
- Transition Frequency :
- 10MHz
- Max Collector Current :
- 4A
- Weight :
- 761mg
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Polarity :
- NPN
- Max Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Height :
- 11mm
- Collector Emitter Saturation Voltage :
- 2.5V
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Published :
- 2000
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- BD681S
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD681S Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 30mA, 1.5A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD681S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681S Applications
There are a lot of ON Semiconductor
BD681S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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