BD681G
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- Mfr.Part #
- BD681G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126
- Stock
- 1,440
- In Stock ：
- 1,440
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN - Darlington
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Max Power Dissipation :
- 40W
- Weight :
- 4.535924g
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-225AA, TO-126-3
- Polarity :
- NPN
- Published :
- 1995
- Current - Collector Cutoff (Max) :
- 500μA
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.66mm
- Current Rating :
- 4A
- Voltage - Rated DC :
- 100V
- hFE Min :
- 750
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 2.5V
- ECCN Code :
- EAR99
- Power Dissipation :
- 40W
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Length :
- 7.74mm
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Height :
- 11.04mm
- Factory Lead Time :
- 7 Weeks
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Base Part Number :
- BD681
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Datasheets
- BD681G
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NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD681G Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 4A volts is possible.
BD681G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD681G Applications
There are a lot of ON Semiconductor
BD681G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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