BD680
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- Mfr.Part #
- BD680
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 44,228
- In Stock ：
- 44,228
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 750
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Case Connection :
- Isolated
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Power Dissipation :
- 40W
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Max Collector Current :
- 4A
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Transistor Type :
- PNP - Darlington
- Length :
- 7.8mm
- Base Part Number :
- BD680
- Width :
- 2.7mm
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 500μA
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Voltage - Rated DC :
- -80V
- Height :
- 10.8mm
- Transition Frequency :
- 10MHz
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- -4A
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2.5V
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 40W
- Polarity :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD680
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PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD680 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD680 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD680 Applications
There are a lot of STMicroelectronics
BD680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| BD680 | onsemi | 12,648 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680A | onsemi | 49,827 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680A | onsemi | 15,537 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680AG | onsemi | 22,377 | TRANS PNP DARL 80V 4A TO126 |
| BD680AS | onsemi | 49,110 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680ASTU | onsemi | 220 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680ASTU | onsemi | 220 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680CS_L2_00001 | onsemi | 17,438 | SURFACE MOUNT SCHOTTKY BARRIER R |
| BD680CS_S2_00001 | onsemi | 12,845 | SURFACE MOUNT SCHOTTKY BARRIER R |
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| BD681 | onsemi | 11,848 | TRANS NPN DARL 100V 4A SOT32-3 |
| BD681 | onsemi | 11,848 | TRANS NPN DARL 100V 4A TO126 |
| BD681G | onsemi | 1,440 | TRANS NPN DARL 100V 4A TO126 |
| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
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