BD682STU
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- Mfr.Part #
- BD682STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A TO126-3
- Stock
- 1,339
- In Stock ：
- 1,339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2002
- Length :
- 8mm
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- -100V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- -5V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 750
- Width :
- 3.25mm
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Packaging :
- Tube
- Height :
- 11mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 14W
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 500μA
- Power Dissipation :
- 14W
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Continuous Collector Current :
- -4A
- Current Rating :
- -4A
- Max Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -100V
- Collector Emitter Saturation Voltage :
- 2.5V
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Transistor Type :
- PNP - Darlington
- Base Part Number :
- BD682
- Polarity :
- PNP
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Weight :
- 761mg
- Datasheets
- BD682STU
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD682STU Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4A volts is possible.
BD682STU Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD682STU Applications
There are a lot of ON Semiconductor
BD682STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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