BD682S
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- Mfr.Part #
- BD682S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A TO126-3
- Stock
- 826
- In Stock ：
- 826
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Length :
- 8mm
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Package / Case :
- TO-225AA, TO-126-3
- Width :
- 3.25mm
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 14W
- Base Part Number :
- BD682
- Continuous Collector Current :
- -4A
- Max Collector Current :
- 4A
- Collector Base Voltage (VCBO) :
- -100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Through Hole
- Number of Pins :
- 3
- hFE Min :
- 750
- Collector Emitter Saturation Voltage :
- 2.5V
- Max Breakdown Voltage :
- 22V
- Polarity :
- PNP
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 14W
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Voltage - Rated DC :
- -100V
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Current Rating :
- -4A
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 500μA
- Transition Frequency :
- 3MHz
- Radiation Hardening :
- No
- Weight :
- 761mg
- Transistor Type :
- PNP - Darlington
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Height :
- 11mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BD682S
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD682S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.In order to achieve high efficiency, the continuous collector voltage should be kept at -4A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 22V volts that it can take.Collector current can be as low as 4A volts at its maximum.
BD682S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD682S Applications
There are a lot of ON Semiconductor
BD682S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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