BD682G

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Mfr.Part #
BD682G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 100V 4A TO126
Stock
1,980
In Stock :
1,980

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Contact Plating :
Tin
Radiation Hardening :
No
Power Dissipation :
40W
Collector Emitter Voltage (VCEO) :
100V
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-225AA, TO-126-3
hFE Min :
750
Transistor Type :
PNP - Darlington
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
6.35mm
Number of Elements :
1
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
5V
Number of Pins :
3
Number of Terminations :
3
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Packaging :
Bulk
Lead Free :
Lead Free
Width :
6.35mm
Max Power Dissipation :
40W
Base Part Number :
BD682
Continuous Collector Current :
4A
Collector Emitter Breakdown Voltage :
100V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Halogen Free :
Halogen Free
Current Rating :
4A
Current - Collector Cutoff (Max) :
500μA
REACH SVHC :
No SVHC
Factory Lead Time :
10 Weeks
Length :
6.35mm
Surface Mount :
No
Published :
1995
Mounting Type :
Through Hole
JESD-609 Code :
e3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pin Count :
3
Collector Base Voltage (VCBO) :
100V
Voltage - Rated DC :
-100V
ECCN Code :
EAR99
Max Collector Current :
4A
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
2.5V
Polarity :
PNP
Weight :
4.535924g
Transistor Application :
AMPLIFIER
Datasheets
BD682G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD682G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, Base Part Number:BD682, Mounting Type:Through Hole, BD682G pinout, BD682G datasheet PDF, BD682G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD682G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD682G


PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD682G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BD682G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD682G Applications


There are a lot of ON Semiconductor
BD682G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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