BD682
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- Mfr.Part #
- BD682
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A TO126
- Stock
- 30,823
- In Stock ：
- 30,823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Package / Case :
- TO-225AA, TO-126-3
- Element Configuration :
- Single
- Base Part Number :
- BD682
- Max Collector Current :
- 4A
- hFE Min :
- 750
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Length :
- 7.8mm
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 2.5V
- Collector Emitter Breakdown Voltage :
- 100V
- Continuous Collector Current :
- 4A
- Power Dissipation :
- 40W
- Transistor Type :
- PNP - Darlington
- Transition Frequency :
- 10MHz
- Current - Collector Cutoff (Max) :
- 500μA
- Width :
- 2.7mm
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 10.8mm
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- -4A
- Polarity :
- PNP
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 40W
- Case Connection :
- Isolated
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Voltage - Rated DC :
- -100V
- Datasheets
- BD682
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PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD682 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 4A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 10MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 4A volts.
BD682 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD682 Applications
There are a lot of STMicroelectronics
BD682 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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