BCW68HTA
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- Mfr.Part #
- BCW68HTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 1,268
- In Stock ：
- 1,268
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -700mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Lead Free :
- Lead Free
- Height :
- 1.1mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -800mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Length :
- 3mm
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Base Part Number :
- BCW68
- Continuous Collector Current :
- -800mA
- Current - Collector Cutoff (Max) :
- 20nA
- Weight :
- 7.994566mg
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 330mW
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 800mA
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Published :
- 2006
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -45V
- Turn Off Time-Max (toff) :
- 400ns
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 330mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BCW68HTA
BCW68HTA Documents
PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68HTA Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW68HTA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BCW68HTA Applications
There are a lot of Diodes Incorporated
BCW68HTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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