BCW60B,235
- Mfr.Part #
- BCW60B,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 91,033
- In Stock :
- 91,033
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 20
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Base Part Number :
- BCW60
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Transition Frequency :
- 250MHz
- Frequency :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- LOW NOISE
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 32V
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Base Voltage (VCBO) :
- 32V
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Turn Off Time-Max (toff) :
- 800ns
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Power Dissipation :
- 250mW
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 250MHz
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Datasheets
- BCW60B,235
BCW60B,235 Documents

NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60B,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.A maximum collector current of 100mA volts can be achieved.
BCW60B,235 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60B,235 Applications
There are a lot of Nexperia USA Inc.
BCW60B,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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