BCW60C,235
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- Mfr.Part #
- BCW60C,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 553,591
- In Stock ：
- 553,591
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Mounting Type :
- Surface Mount
- Base Part Number :
- BCW60
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 250MHz
- Gain Bandwidth Product :
- 250MHz
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Published :
- 2001
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 32V
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 32V
- Max Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 250mW
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- hFE Min :
- 40
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Turn Off Time-Max (toff) :
- 800ns
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Datasheets
- BCW60C,235
BCW60C,235 Documents
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60C,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 100mA volts.
BCW60C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60C,235 Applications
There are a lot of Nexperia USA Inc.
BCW60C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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