BCW60C,235
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- Mfr.Part #
- BCW60C,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 553,591
- In Stock ：
- 553,591
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Frequency :
- 250MHz
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 32V
- hFE Min :
- 40
- Collector Emitter Voltage (VCEO) :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Turn Off Time-Max (toff) :
- 800ns
- Element Configuration :
- Single
- Base Part Number :
- BCW60
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 32V
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 250MHz
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Published :
- 2001
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Datasheets
- BCW60C,235
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60C,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 100mA volts.
BCW60C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60C,235 Applications
There are a lot of Nexperia USA Inc.
BCW60C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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