BCW60C215
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- Mfr.Part #
- BCW60C215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA SMALL SIGNAL BIPOLA
- Stock
- 21,301
- In Stock ：
- 21,301
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Turn Off Time-Max (toff) :
- 800ns
- Voltage - Collector Emitter Breakdown (Max) :
- 32V
- Published :
- 2009
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BCW60
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transition Frequency :
- 250MHz
- Terminal Position :
- Dual
- HTS Code :
- 8541.21.00.75
- Series :
- Automotive, AEC-Q101
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Frequency - Transition :
- 250MHz
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Turn On Time-Max (ton) :
- 150ns
- Terminal Form :
- Gull wing
- Additional Feature :
- LOW NOISE
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- VCEsat-Max :
- 0.55 V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- JESD-30 Code :
- R-PDSO-G3
- Power - Max :
- 250mW
- Current - Collector (Ic) (Max) :
- 100mA
- Configuration :
- Single
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BCW60C215
BCW60C215 Documents
Specialized ICs NXP Semiconductors BCW60C215 Overview
The Specialized ICs NXP Semiconductors BCW60C215 is a high-performance NPN bipolar junction transistor (BJT) designed for advanced electronic applications requiring low power and high speed. This device is housed in a compact TO-236-3, SC-59, SOT-23-3 package, making it ideal for surface mount technology. It features a maximum collector-emitter voltage of 32V and supports a collector-base breakdown voltage of 50V, which makes it highly effective in circuit applications that require voltage regulation and signal amplification. The BCW60C215 operates efficiently up to a junction temperature of 150°C and features a low collector cut-off current of 20nA, ensuring minimal power loss and enhancing overall system reliability.
Key Features
The key features of the Specialized ICs NXP Semiconductors BCW60C215 include:
- DC current gain of 250 @ 2mA 5V, providing robust signal amplification capabilities.
- Low saturation voltage of 550mV @ 1.25mA, ensuring efficient operation at lower currents.
- High transition frequency of 250MHz, suitable for high-speed switching applications.
- Collector-emitter breakdown voltage of 32V and collector-base breakdown voltage of 50V, offering reliable performance under stress.
Applications
The Specialized ICs NXP Semiconductors BCW60C215 is versatile in its applications, suitable for a wide range of electronic circuits including:
- Inverters, for converting DC to AC power in a compact form factor.
- Interface circuits, where signal integrity is critical.
- Driver circuits for activating or controlling other electronic components.
- Muting circuits in audio applications, where noise reduction is required.
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