BCW60BE6327HTSA1
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- Mfr.Part #
- BCW60BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A SOT23
- Stock
- 151,809
- In Stock ：
- 151,809
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 330mW
- Current Rating :
- 100mA
- Halogen Free :
- Not Halogen Free
- Frequency :
- 250MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Base Part Number :
- BCW60
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 550mV
- JESD-609 Code :
- e3
- Published :
- 2007
- Power Dissipation :
- 330mW
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Collector Emitter Breakdown Voltage :
- 32V
- Collector Base Voltage (VCBO) :
- 32V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 32V
- Transition Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Datasheets
- BCW60BE6327HTSA1
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60BE6327HTSA1 Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW60BE6327HTSA1 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BCW60BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW60BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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