BCW60B,215
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- Mfr.Part #
- BCW60B,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 3,234
- In Stock ：
- 3,234
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Collector Emitter Breakdown Voltage :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Max (toff) :
- 800ns
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Transition Frequency :
- 250MHz
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Forward Voltage :
- 550mV
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Frequency :
- 250MHz
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Repetitive Reverse Voltage (Vrrm) :
- 40V
- Radiation Hardening :
- No
- Published :
- 2002
- Number of Pins :
- 3
- hFE Min :
- 20
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 250MHz
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Power Dissipation :
- 250mW
- Max Breakdown Voltage :
- 32V
- Termination :
- SMD/SMT
- Series :
- Automotive, AEC-Q101
- Forward Current :
- 100mA
- Max Forward Surge Current (Ifsm) :
- 1A
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 32V
- Base Part Number :
- BCW60
- Datasheets
- BCW60B,215
BCW60B,215 Documents
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60B,215 Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW60B,215 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60B,215 Applications
There are a lot of Nexperia USA Inc.
BCW60B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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