BCW60B,215
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- Mfr.Part #
- BCW60B,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 3,234
- In Stock ：
- 3,234
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 32V
- Contact Plating :
- Tin
- Max Repetitive Reverse Voltage (Vrrm) :
- 40V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- hFE Min :
- 20
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Emitter Voltage (VCEO) :
- 32V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Frequency :
- 250MHz
- Pin Count :
- 3
- Transistor Type :
- NPN
- Max Forward Surge Current (Ifsm) :
- 1A
- Power Dissipation :
- 250mW
- Forward Voltage :
- 550mV
- Forward Current :
- 100mA
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Base Part Number :
- BCW60
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 32V
- Turn Off Time-Max (toff) :
- 800ns
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Datasheets
- BCW60B,215
BCW60B,215 Documents
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60B,215 Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW60B,215 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60B,215 Applications
There are a lot of Nexperia USA Inc.
BCW60B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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