BCW60B,215
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- Mfr.Part #
- BCW60B,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 3,234
- In Stock ：
- 3,234
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BCW60
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Forward Voltage :
- 550mV
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 32V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 32V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 32V
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Frequency :
- 250MHz
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Max Repetitive Reverse Voltage (Vrrm) :
- 40V
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 250MHz
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Turn Off Time-Max (toff) :
- 800ns
- Max Breakdown Voltage :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 250mW
- Max Forward Surge Current (Ifsm) :
- 1A
- Termination :
- SMD/SMT
- Published :
- 2002
- Element Configuration :
- Single
- Forward Current :
- 100mA
- JESD-609 Code :
- e3
- hFE Min :
- 20
- Power Dissipation :
- 250mW
- Transition Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCW60B,215
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60B,215 Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW60B,215 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60B,215 Applications
There are a lot of Nexperia USA Inc.
BCW60B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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