BCW68GLT3G
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- Mfr.Part #
- BCW68GLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 17,607
- In Stock ：
- 17,607
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 800mA
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Width :
- 2.64mm
- Length :
- 3.04mm
- hFE Min :
- 120
- Number of Elements :
- 1
- Published :
- 1996
- Base Part Number :
- BCW68
- Current - Collector Cutoff (Max) :
- 20nA
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Height :
- 1.11mm
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 225mW
- Collector Emitter Saturation Voltage :
- -1.5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 30mA, 300mA
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 1V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BCW68GLT3G
BCW68GLT3G Documents
PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68GLT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of -1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 800mA volts.
BCW68GLT3G Features
the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW68GLT3G Applications
There are a lot of ON Semiconductor
BCW68GLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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