BCW68GLT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

Frequency :

100MHz

Max Collector Current :

800mA

Length :

3.04mm

Gain Bandwidth Product :

100MHz

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Surface Mount :

yes

Transition Frequency :

100MHz

Power Dissipation :

300mW

JESD-609 Code :

e3

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Pbfree Code :

yes

Published :

1996

Transistor Element Material :

SILICON

Base Part Number :

BCW68

Width :

2.64mm

Terminal Position :

Dual

Height :

1.11mm

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

-1.5V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 30mA, 300mA

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

45V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

300mW

hFE Min :

120

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA 1V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

20nA

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

45V

Power - Max :

225mW

RoHS Status :

ROHS3 Compliant