BCW68GLT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Terminal Form :

Gull wing

Length :

3.04mm

Collector Emitter Saturation Voltage :

-1.5V

Collector Base Voltage (VCBO) :

60V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

REACH SVHC :

No SVHC

Max Power Dissipation :

225mW

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Power - Max :

225mW

Max Breakdown Voltage :

45V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

45V

Collector Emitter Breakdown Voltage :

-45V

Height :

1.01mm

hFE Min :

120

Current Rating :

-800mA

Max Collector Current :

800mA

Number of Elements :

1

Width :

1.4mm

Gain Bandwidth Product :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

BCW68

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 30mA, 300mA

Transistor Type :

PNP

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Frequency :

100MHz

Published :

1996

Terminal Position :

Dual

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA 1V

Element Configuration :

Single

Transition Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

-45V

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

20nA

Power Dissipation :

300mW