BCW68GLT1
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- Mfr.Part #
- BCW68GLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP GP 45V 800MA SOT-23
- Stock
- 9,997
- In Stock ：
- 9,997
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- -45V
- Max Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 60V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 30mA, 300mA
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Published :
- 1996
- Base Part Number :
- BCW68
- Voltage - Rated DC :
- -45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 100MHz
- Current Rating :
- -800mA
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- hFE Min :
- 120
- Power - Max :
- 225mW
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 1V
- Pin Count :
- 3
- Max Collector Current :
- 800mA
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Transistor Type :
- PNP
- Max Power Dissipation :
- 225mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.04mm
- Current - Collector Cutoff (Max) :
- 20nA
- Height :
- 1.01mm
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -1.5V
- Datasheets
- BCW68GLT1
BCW68GLT1 Documents
PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68GLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of -1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 800mA volts.
BCW68GLT1G Features
the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BCW68GLT1G Applications
There are a lot of ON Semiconductor
BCW68GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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