BCW68GLT1
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- Mfr.Part #
- BCW68GLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP GP 45V 800MA SOT-23
- Stock
- 9,997
- In Stock ：
- 9,997
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Height :
- 1.01mm
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 225mW
- Published :
- 1996
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -800mA
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- -45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 30mA, 300mA
- Contact Plating :
- Tin
- hFE Min :
- 120
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 800mA
- Width :
- 1.4mm
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 1V
- Collector Emitter Breakdown Voltage :
- -45V
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 20nA
- Collector Emitter Saturation Voltage :
- -1.5V
- Frequency :
- 100MHz
- Power - Max :
- 225mW
- Base Part Number :
- BCW68
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 3.04mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BCW68GLT1
PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68GLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of -1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 800mA volts.
BCW68GLT1G Features
the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BCW68GLT1G Applications
There are a lot of ON Semiconductor
BCW68GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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