BCW68FE6327HTSA1
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- Mfr.Part #
- BCW68FE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23
- Stock
- 19,871
- In Stock ：
- 19,871
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Power Dissipation :
- 330mW
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Voltage - Rated DC :
- -45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transition Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Frequency :
- 200MHz
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 700mV
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 800mA
- Base Part Number :
- BCW68
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 330mW
- Emitter Base Voltage (VEBO) :
- 2V
- Current - Collector (Ic) (Max) :
- 800mA
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2002
- Halogen Free :
- Not Halogen Free
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Current Rating :
- -800mA
- Number of Pins :
- 3
- Datasheets
- BCW68FE6327HTSA1
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68FE6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 2V.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 800mA volts.
BCW68FE6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz
BCW68FE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW68FE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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