BCW67BE6327HTSA1
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- Mfr.Part #
- BCW67BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.8A SOT23
- Stock
- 154,354
- In Stock ：
- 154,354
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 800mA
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Terminal Position :
- Dual
- Max Power Dissipation :
- 330mW
- Collector Emitter Voltage (VCEO) :
- 700mV
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 330mW
- Lead Free :
- Lead Free
- Published :
- 2011
- Base Part Number :
- BCW67
- Halogen Free :
- Not Halogen Free
- Number of Pins :
- 3
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Frequency :
- 200MHz
- Voltage - Rated DC :
- -32V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 32V
- Pbfree Code :
- yes
- Max Collector Current :
- 800mA
- Collector Base Voltage (VCBO) :
- 45V
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -800mA
- Emitter Base Voltage (VEBO) :
- 2V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BCW67BE6327HTSA1
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW67BE6327HTSA1 Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 2V.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 200MHz.A maximum collector current of 800mA volts is possible.
BCW67BE6327HTSA1 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz
BCW67BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCW67BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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