BCW66KHB6327HTLA1

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Mfr.Part #
BCW66KHB6327HTLA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.8A SOT23
Stock
39,438
In Stock :
39,438

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
45V
Number of Pins :
3
Base Part Number :
BCW66
Terminal Position :
Dual
Mount :
Surface Mount
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Power Dissipation :
500mW
Configuration :
Single
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Contact Plating :
Tin
Package / Case :
TO-236-3, SC-59, SOT-23-3
Max Collector Current :
800mA
Transistor Application :
AMPLIFIER
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
450mV @ 50mA, 500mA
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100mA 1V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Collector (Ic) (Max) :
800mA
Power Dissipation :
500mW
Current - Collector Cutoff (Max) :
20nA ICBO
Operating Temperature :
150°C TJ
Transition Frequency :
170MHz
Mounting Type :
Surface Mount
Published :
2007
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Breakdown Voltage :
45V
Frequency :
170MHz
Collector Base Voltage (VCBO) :
75V
Terminal Form :
Gull wing
Datasheets
BCW66KHB6327HTLA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCW66KHB6327HTLA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:BCW66, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, BCW66KHB6327HTLA1 pinout, BCW66KHB6327HTLA1 datasheet PDF, BCW66KHB6327HTLA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCW66KHB6327HTLA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCW66KHB6327HTLA1


NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BCW66KHB6327HTLA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 170MHz in the part.When collector current reaches its maximum, it can reach 800mA volts.

BCW66KHB6327HTLA1 Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz


BCW66KHB6327HTLA1 Applications


There are a lot of Infineon Technologies
BCW66KHB6327HTLA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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