BCW66KHB6327HTLA1
- Mfr.Part #
- BCW66KHB6327HTLA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23
- Stock
- 39,438
- In Stock :
- 39,438
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Base Part Number :
- BCW66
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- Configuration :
- Single
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 800mA
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 800mA
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 170MHz
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Frequency :
- 170MHz
- Collector Base Voltage (VCBO) :
- 75V
- Terminal Form :
- Gull wing
- Datasheets
- BCW66KHB6327HTLA1

NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66KHB6327HTLA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 170MHz in the part.When collector current reaches its maximum, it can reach 800mA volts.
BCW66KHB6327HTLA1 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BCW66KHB6327HTLA1 Applications
There are a lot of Infineon Technologies
BCW66KHB6327HTLA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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