BCW66HTC
- Mfr.Part #
- BCW66HTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 9,544
- In Stock :
- 9,544
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 700mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Reach Compliance Code :
- Unknown
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Time-Max (ton) :
- 100ns
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 20nA
- Current Rating :
- 800mA
- Mount :
- Surface Mount
- Continuous Collector Current :
- 800mA
- Transition Frequency :
- 100MHz
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2012
- Base Part Number :
- BCW66
- Voltage - Rated DC :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 800mA
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 75V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 330mW
- Turn Off Time-Max (toff) :
- 400ns
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- BCW66HTC

NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66HTC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 800mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 800mA volts at its maximum.
BCW66HTC Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66HTC Applications
There are a lot of Diodes Incorporated
BCW66HTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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