BCW66HTC
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- Mfr.Part #
- BCW66HTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 9,544
- In Stock ：
- 9,544
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 800mA
- HTS Code :
- 8541.21.00.95
- Turn On Time-Max (ton) :
- 100ns
- Current - Collector Cutoff (Max) :
- 20nA
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 45V
- Current Rating :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Base Part Number :
- BCW66
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Max (toff) :
- 400ns
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- MATTE TIN
- Pin Count :
- 3
- Published :
- 2012
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 800mA
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Reach Compliance Code :
- Unknown
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 75V
- Max Power Dissipation :
- 330mW
- Terminal Form :
- Gull wing
- Datasheets
- BCW66HTC
BCW66HTC Documents
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66HTC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 800mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 800mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 800mA volts at its maximum.
BCW66HTC Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66HTC Applications
There are a lot of Diodes Incorporated
BCW66HTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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