BCW66GLT3G
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- Mfr.Part #
- BCW66GLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 192,405
- In Stock ：
- 192,405
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Length :
- 3.04mm
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 2.64mm
- Height :
- 1.11mm
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Max Power Dissipation :
- 225mW
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 20nA
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Base Part Number :
- BCW66
- Turn Off Time-Max (toff) :
- 400ns
- Surface Mount :
- yes
- hFE Min :
- 50
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 75V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BCW66GLT3G
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 800mA volts.
BCW66GLT3G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW66GLT3G Applications
There are a lot of ON Semiconductor
BCW66GLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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