BCW66GLT1G
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- Mfr.Part #
- BCW66GLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 6,483
- In Stock ：
- 6,483
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- hFE Min :
- 110
- Collector Emitter Saturation Voltage :
- 700mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Max Collector Current :
- 800mA
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn Off Time-Max (toff) :
- 400ns
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 45V
- Height :
- 940μm
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 20nA
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Voltage - Rated DC :
- 45V
- Collector Base Voltage (VCBO) :
- 75V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Base Part Number :
- BCW66
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Width :
- 1.3mm
- Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Current Rating :
- 800mA
- Length :
- 2.9mm
- Published :
- 1996
- Polarity/Channel Type :
- NPN
- Datasheets
- BCW66GLT1G
BCW66GLT1G Documents
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66GLT1G Applications
There are a lot of ON Semiconductor
BCW66GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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