BCW66GLT1G
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- Mfr.Part #
- BCW66GLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 6,483
- In Stock ：
- 6,483
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Element Configuration :
- Single
- Height :
- 940μm
- Collector Emitter Saturation Voltage :
- 700mV
- Max Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 20nA
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BCW66
- Max Collector Current :
- 800mA
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- hFE Min :
- 110
- Current Rating :
- 800mA
- Transition Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Published :
- 1996
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn Off Time-Max (toff) :
- 400ns
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 75V
- Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Length :
- 2.9mm
- Width :
- 1.3mm
- Datasheets
- BCW66GLT1G
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66GLT1G Applications
There are a lot of ON Semiconductor
BCW66GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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