BCW66GLT1
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- Mfr.Part #
- BCW66GLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 44,096
- In Stock ：
- 44,096
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 400ns
- Collector Emitter Saturation Voltage :
- 700mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.3mm
- Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 940μm
- Base Part Number :
- BCW66
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 75V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Length :
- 2.9mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 20nA
- Max Collector Current :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- hFE Min :
- 110
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 300mW
- Published :
- 1996
- Current Rating :
- 800mA
- Frequency :
- 100MHz
- Datasheets
- BCW66GLT1
BCW66GLT1 Documents
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66GLT1G Applications
There are a lot of ON Semiconductor
BCW66GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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