BCW66GLT1
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- Mfr.Part #
- BCW66GLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 44,096
- In Stock ：
- 44,096
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 2.9mm
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 1996
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 75V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Voltage (VCEO) :
- 45V
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Base Part Number :
- BCW66
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 400ns
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 20nA
- Max Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Height :
- 940μm
- Current Rating :
- 800mA
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Max Collector Current :
- 800mA
- Voltage - Rated DC :
- 45V
- Gain Bandwidth Product :
- 100MHz
- hFE Min :
- 110
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Width :
- 1.3mm
- Collector Emitter Saturation Voltage :
- 700mV
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 45V
- Power Dissipation :
- 300mW
- Datasheets
- BCW66GLT1
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66GLT1G Applications
There are a lot of ON Semiconductor
BCW66GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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