BCW66G
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- Mfr.Part #
- BCW66G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT23-3
- Stock
- 27,511
- In Stock ：
- 27,511
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 30mg
- Frequency - Transition :
- 100MHz
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Current - Collector (Ic) (Max) :
- 1A
- hFE Min :
- 160
- Element Configuration :
- Single
- Base Part Number :
- BCW66
- REACH SVHC :
- No SVHC
- Current Rating :
- 1A
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 350mW
- Max Collector Current :
- 1A
- Supplier Device Package :
- SOT-23-3
- Length :
- 2.9mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 930μm
- RoHS Status :
- RoHS Compliant
- Published :
- 2002
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Voltage - Rated DC :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Power - Max :
- 350mW
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 350mW
- Gain Bandwidth Product :
- 170MHz
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Base Voltage (VCBO) :
- 75V
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Width :
- 1.3mm
- Max Frequency :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Datasheets
- BCW66G
BCW66G Documents
NPN -55°C~150°C TJ 20nA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 45V volts.SOT-23-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.
BCW66G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of SOT-23-3
BCW66G Applications
There are a lot of ON Semiconductor
BCW66G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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