BCW65CLT1
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- Mfr.Part #
- BCW65CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 18,581
- In Stock ：
- 18,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 80
- Height :
- 1.11mm
- Terminal Position :
- Dual
- Max Power Dissipation :
- 225mW
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Max Collector Current :
- 800mA
- Current - Collector Cutoff (Max) :
- 20nA
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Frequency :
- 100MHz
- Length :
- 3.04mm
- Width :
- 1.4mm
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 3
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 32V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 32V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Turn Off Time-Max (toff) :
- 400ns
- Base Part Number :
- BCW65
- Current Rating :
- 800mA
- Voltage - Rated DC :
- 32V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BCW65CLT1
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65CLT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65CLT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65CLT1G Applications
There are a lot of ON Semiconductor
BCW65CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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