BCW65CLT1
- Mfr.Part #
- BCW65CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 18,581
- In Stock :
- 18,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Length :
- 3.04mm
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Max Power Dissipation :
- 225mW
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- hFE Min :
- 80
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Max Collector Current :
- 800mA
- Max Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Surface Mount :
- yes
- Base Part Number :
- BCW65
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 400ns
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.11mm
- Voltage - Rated DC :
- 32V
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA
- Pbfree Code :
- yes
- Current Rating :
- 800mA
- Width :
- 1.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 32V
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Breakdown Voltage :
- 32V
- Published :
- 2005
- Datasheets
- BCW65CLT1
BCW65CLT1 Documents

NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65CLT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65CLT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65CLT1G Applications
There are a lot of ON Semiconductor
BCW65CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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