BCW65CLT1

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Mfr.Part #
BCW65CLT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 32V 0.8A SOT23-3
Stock
18,581
In Stock :
18,581

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
300mW
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Gain Bandwidth Product :
100MHz
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Length :
3.04mm
Number of Elements :
1
Radiation Hardening :
No
Max Power Dissipation :
225mW
Transition Frequency :
100MHz
Terminal Form :
Gull wing
hFE Min :
80
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Number of Terminations :
3
Terminal Position :
Dual
JESD-609 Code :
e3
Max Collector Current :
800mA
Max Breakdown Voltage :
32V
Lead Free :
Lead Free
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Surface Mount :
yes
Base Part Number :
BCW65
Terminal Finish :
Tin (Sn)
Factory Lead Time :
2 Weeks
Element Configuration :
Single
REACH SVHC :
No SVHC
Frequency :
100MHz
Package / Case :
TO-236-3, SC-59, SOT-23-3
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
Turn Off Time-Max (toff) :
400ns
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
40
Peak Reflow Temperature (Cel) :
260
Height :
1.11mm
Voltage - Rated DC :
32V
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
20nA
Pbfree Code :
yes
Current Rating :
800mA
Width :
1.4mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100mA 1V
Collector Base Voltage (VCBO) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
32V
Collector Emitter Saturation Voltage :
700mV
Collector Emitter Breakdown Voltage :
32V
Published :
2005
Introducing Transistors - Bipolar (BJT) - Single onsemi BCW65CLT1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, Base Part Number:BCW65, Package / Case:TO-236-3, SC-59, SOT-23-3, BCW65CLT1 pinout, BCW65CLT1 datasheet PDF, BCW65CLT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BCW65CLT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BCW65CLT1


NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BCW65CLT1G Overview


This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.

BCW65CLT1G Features


the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz


BCW65CLT1G Applications


There are a lot of ON Semiconductor
BCW65CLT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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