BCW65ALT1G
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- Mfr.Part #
- BCW65ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 3,992
- In Stock ：
- 3,992
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 20nA
- JESD-609 Code :
- e3
- Current Rating :
- 800mA
- Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 1.11mm
- Base Part Number :
- BCW65
- Length :
- 3.04mm
- Max Power Dissipation :
- 225mW
- Voltage - Rated DC :
- 32V
- Pbfree Code :
- yes
- Max Collector Current :
- 800mA
- Collector Emitter Breakdown Voltage :
- 32V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 32V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Pin Count :
- 3
- Max Breakdown Voltage :
- 32V
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Turn Off Time-Max (toff) :
- 400ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Width :
- 2.64mm
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- hFE Min :
- 35
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BCW65ALT1G
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65ALT1G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65ALT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65ALT1G Applications
There are a lot of ON Semiconductor
BCW65ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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