BCW65ALT1
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- Mfr.Part #
- BCW65ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 43,776
- In Stock ：
- 43,776
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 32V
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.11mm
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 32V
- Frequency :
- 100MHz
- Max Collector Current :
- 800mA
- Base Part Number :
- BCW65
- Current - Collector Cutoff (Max) :
- 20nA
- Collector Emitter Breakdown Voltage :
- 32V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 800mA
- Turn Off Time-Max (toff) :
- 400ns
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Length :
- 3.04mm
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Published :
- 2005
- Number of Pins :
- 3
- Width :
- 2.64mm
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Power Dissipation :
- 225mW
- Transition Frequency :
- 100MHz
- hFE Min :
- 35
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 32V
- Datasheets
- BCW65ALT1
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65ALT1G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65ALT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65ALT1G Applications
There are a lot of ON Semiconductor
BCW65ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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