BCW61DTA
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- Mfr.Part #
- BCW61DTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.2A SOT23-3
- Stock
- 9,965
- In Stock ：
- 9,965
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -32V
- Gain Bandwidth Product :
- 180MHz
- Packaging :
- Cut Tape (CT)
- Base Part Number :
- BCW61
- Current Rating :
- -200mA
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Length :
- 3.05mm
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 20nA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Width :
- 1.4mm
- Power - Max :
- 330mW
- HTS Code :
- 8541.21.00.75
- Reference Standard :
- CECC
- Max Breakdown Voltage :
- 32V
- Collector Emitter Voltage (VCEO) :
- 550mV
- Turn On Time-Max (ton) :
- 150ns
- Lead Free :
- Contains Lead
- Max Power Dissipation :
- 330mW
- Collector Emitter Breakdown Voltage :
- 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 380 @ 2mA 5V
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 32V
- Transition Frequency :
- 180MHz
- Height :
- 1mm
- Published :
- 1997
- Terminal Position :
- Dual
- RoHS Status :
- Non-RoHS Compliant
- Weight :
- 200.998119mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn Off Time-Max (toff) :
- 800ns
- JESD-30 Code :
- R-PDSO-G3
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Max Collector Current :
- 200mA
- Datasheets
- BCW61DTA
PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCW61DTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 380 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 1.25mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BCW61DTA Features
the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 180MHz
BCW61DTA Applications
There are a lot of Diodes Incorporated
BCW61DTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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